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- W2131913729 endingPage "1429" @default.
- W2131913729 startingPage "1425" @default.
- W2131913729 abstract "Thin-film resistors are useful in monolithic integrated circuits whenever high sheet resistance (ρ <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>s</inf> > 1 kΩ/sq) or radiation hardness are required. Silicide resistive films (MoSi <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> , CrSi <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> , and Si-Cr) deposited by dc sputtering have been shown to be compatible with monolithic circuit production end require no protective overlayer. Si-Cr films 200-300 Å thick have ρ <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>s</inf> , and temperature coefficients of resistance (TCR) ranging from about 1 kΩ/sq and +150 ppm/°C (CrSi <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> ) to 20 kΩ/sq and -1400 ppm/°C (17 at % Cr). MoSi <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> is best suited for resistor applications requiring 100-200Ω/sq. MoSi <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> films are about 700 Å thick at 200 Ω/sq, compared to < 100 Å for 200-Ω/sq Ni-Cr, and their TCR is -125 ppm/°C. Typical stability for unprotected silicide resistors in TO-5 packages at 200°C, no load, is < ±3 percent during the first 200 h and < ± 0.5 percent during the next 2000 h. The films are stable during short term exposure to high temperatures as encountered during monolithic or hybrid circuit ceramic package sealing." @default.
- W2131913729 created "2016-06-24" @default.
- W2131913729 creator A5028404596 @default.
- W2131913729 date "1971-10-01" @default.
- W2131913729 modified "2023-09-27" @default.
- W2131913729 title "Silicide resistors for integrated circuits" @default.
- W2131913729 cites W1995571013 @default.
- W2131913729 cites W1998091874 @default.
- W2131913729 cites W1998717539 @default.
- W2131913729 cites W2009292104 @default.
- W2131913729 cites W2010302885 @default.
- W2131913729 cites W2010527200 @default.
- W2131913729 cites W2033501194 @default.
- W2131913729 cites W2042552778 @default.
- W2131913729 cites W2057591745 @default.
- W2131913729 cites W2058505533 @default.
- W2131913729 cites W2098199248 @default.
- W2131913729 cites W2101204781 @default.
- W2131913729 cites W2101517605 @default.
- W2131913729 cites W2138151866 @default.
- W2131913729 cites W2244549461 @default.
- W2131913729 cites W2546144278 @default.
- W2131913729 doi "https://doi.org/10.1109/proc.1971.8449" @default.
- W2131913729 hasPublicationYear "1971" @default.
- W2131913729 type Work @default.
- W2131913729 sameAs 2131913729 @default.
- W2131913729 citedByCount "13" @default.
- W2131913729 countsByYear W21319137292012 @default.
- W2131913729 countsByYear W21319137292016 @default.
- W2131913729 countsByYear W21319137292018 @default.
- W2131913729 countsByYear W21319137292019 @default.
- W2131913729 countsByYear W21319137292022 @default.
- W2131913729 countsByYear W21319137292023 @default.
- W2131913729 crossrefType "journal-article" @default.
- W2131913729 hasAuthorship W2131913729A5028404596 @default.
- W2131913729 hasConcept C111919701 @default.
- W2131913729 hasConcept C119599485 @default.
- W2131913729 hasConcept C127413603 @default.
- W2131913729 hasConcept C137488568 @default.
- W2131913729 hasConcept C165801399 @default.
- W2131913729 hasConcept C192562407 @default.
- W2131913729 hasConcept C2780901251 @default.
- W2131913729 hasConcept C41008148 @default.
- W2131913729 hasConcept C49040817 @default.
- W2131913729 hasConcept C544956773 @default.
- W2131913729 hasConcept C6899612 @default.
- W2131913729 hasConceptScore W2131913729C111919701 @default.
- W2131913729 hasConceptScore W2131913729C119599485 @default.
- W2131913729 hasConceptScore W2131913729C127413603 @default.
- W2131913729 hasConceptScore W2131913729C137488568 @default.
- W2131913729 hasConceptScore W2131913729C165801399 @default.
- W2131913729 hasConceptScore W2131913729C192562407 @default.
- W2131913729 hasConceptScore W2131913729C2780901251 @default.
- W2131913729 hasConceptScore W2131913729C41008148 @default.
- W2131913729 hasConceptScore W2131913729C49040817 @default.
- W2131913729 hasConceptScore W2131913729C544956773 @default.
- W2131913729 hasConceptScore W2131913729C6899612 @default.
- W2131913729 hasIssue "10" @default.
- W2131913729 hasLocation W21319137291 @default.
- W2131913729 hasOpenAccess W2131913729 @default.
- W2131913729 hasPrimaryLocation W21319137291 @default.
- W2131913729 hasRelatedWork W1970490652 @default.
- W2131913729 hasRelatedWork W2100196394 @default.
- W2131913729 hasRelatedWork W2138554610 @default.
- W2131913729 hasRelatedWork W2731753205 @default.
- W2131913729 hasRelatedWork W2761189003 @default.
- W2131913729 hasRelatedWork W2787580891 @default.
- W2131913729 hasRelatedWork W2798586763 @default.
- W2131913729 hasRelatedWork W2798982538 @default.
- W2131913729 hasRelatedWork W4235487467 @default.
- W2131913729 hasRelatedWork W96232274 @default.
- W2131913729 hasVolume "59" @default.
- W2131913729 isParatext "false" @default.
- W2131913729 isRetracted "false" @default.
- W2131913729 magId "2131913729" @default.
- W2131913729 workType "article" @default.