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• W2132103685 abstract "We present a study of the interface between a NiTi film deposited by magnetron d.c. sputtering and a SiO2 film obtained by thermal oxidation. Electron-induced X-ray emission spectroscopy (EXES) is used to characterize the physicochemical environment around the Si atoms at the NiTi/SiO2 interface, and to obtain information about the interfacial reactivity. From analysis of the Si 3p valence states, the composition and the thickness of the interfacial zone before and after annealing are deduced. The composition of the passivation layer, located at the surface of the metallic film, is determined by EXES and X-ray Photoelectron Spectroscopy. Copyright © 2002 John Wiley & Sons, Ltd." @default.
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• W2132103685 date "2002-01-01" @default.
• W2132103685 modified "2023-09-27" @default.
• W2132103685 title "Study of the NiTi/SiO2 interface: analysis of the electronic distributions" @default.
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• W2132103685 doi "https://doi.org/10.1002/sia.1390" @default.
• W2132103685 hasPublicationYear "2002" @default.
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