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• W2132130414 abstract "as a switching device for such applications [l]. In previous study, the GaAs bulk switches were 0.5 mm An electron-beam-controlled GaAs closing and thick, and the electron-beam energy were in the order opening switch with megahertz repetition rate of 150 keV, requiring a large system for the beam capability has been demonstrated. A 2-mm thick source. We report here an electron-beam-controlled semi-insulating GaAs bulk switch was switched at 250 V, 9 Akm2 with less than 20 % dissipation and semiconductor switch (EBCSS) based on thick semian opening time of 250 nsec. The switch was insulating GaAs that was switched with an electronfabricated in a hermetically sealed vacuum package, beam energy less than 50 keV. incorporating an electron-beam driver and a bulk A linear operation of GaAs-based switch in a single modular unit. The switch uses a photoconductive switches requires a large laser system for the triggering source in order to obtain an low voltage (< 50 keV) electron beam incident on the efficient switching performance. Bulky laser system surface of the semiconductor sample to generate photons through cathodoluminescence; the photons can be replaced with an efficient, compact electronthen ionize the bulk sample as in photoconductive beam source and still maintain the photoconductive switch. The device exhibited a switching threshold at mode of operation. For electron-beam energies less an electron-beam energy of about 35 keV and a low than 50 keV, the penetration depth of the incident dissipation switching at 45 keV. The electron-beam- electrons is less than 15 pm [2]. Most of the electron controlled GaAs switch results in a much higher energy is dissipated within this region near the surface overall system efficiency and less complexity due to to create a large density of electron-hole pairs and to the elimination of the high power laser required by locally heat the crystal lattice. The lattice heatingdirect photoconductive switching. This study has along with band-gap narrowing due to high density of demonstrated the feasibility of producing electron- electron-hole pairs [3]-reduces the effective bandbeam controlled semiconductor switches for practical gap energy of the surface region, and thus the photons applications. This switch can have application in generated by the radiative recombination of electronmany pulsed power systems including ballistic missile hole pairs have energies less than the roomdefense radar systems, radio-frequency induction temperature band-gap energy. The absorption length accelerators, and systems that require an opening of such photons in the bulk region-depending on the switch for inductive energy storage or for pulse length energy-can be as large as 5 mm, thus ionizing the modulation. whole thickness of the switch. Therefore, a low energy electron beam is an attractive gating source for In the present study, a highly efficient, dispenser-cathode-electron source is integrated with the GaAs bulk switch to form a compact, selfcontained switching module to be used in pulsed power circuits. Both the closing and opening capabilities for megahertz repetition rate applications have been demonstrated." @default.
• W2132130414 created "2016-06-24" @default.
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• W2132130414 date "2005-08-24" @default.
• W2132130414 modified "2023-09-26" @default.
• W2132130414 title "GaAs SWLTCH CONTROLLED BY LOW-ENERGY ELECTRON BEAM" @default.
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• W2132130414 doi "https://doi.org/10.1109/modsym.1992.492622" @default.
• W2132130414 hasPublicationYear "2005" @default.
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