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• W2132474115 abstract "Measurements of the impact-ionization multiplication coefficient M-1 in advanced Si BJTs up to values in excess of 10 (corresponding to a peak electric field at the base-collector junction of about 9*10/sup 5/ V/cm) are presented. The intrinsic limitations affecting M-1 measurements at high electric fields are discussed. In particular, the fundamental role played by the negative base current and the parasitic base resistance in determining instabilities during M-1 measurements is pointed out. An accurate theoretical prediction of the M-1 coefficient on collector-base voltages close to BV/sub CBO/ requires that the contribution of holes to impact ionization be properly accounted for.< <ETX xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>></ETX>" @default.
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• W2132474115 date "1993-02-01" @default.
• W2132474115 modified "2023-09-27" @default.
• W2132474115 title "Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJT's" @default.
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• W2132474115 doi "https://doi.org/10.1109/55.215111" @default.
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