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• W2132587716 abstract "The aim of this thesis is to perform an electrical characterization and several reliability tests on different kind of RF-MEMS switches in order to analyze which are the weaknesses and the strengths of this new technology. Electrical characterizations have been done using two different measurement systems. The first, based on a vector network analyzer and a power supply, has been used to test the RF performances of the devices and to extract the best actuation and deactuation voltages. The second set up, based on the internal RF signal generator of the VNA, and an 8-GHz digital signal oscilloscope, has been used to characterize the electrical performances like actuation time, release delay. Cycling stress, one of the most common test used to understand the robustness of this kind of devices, has been per- formed on different topologies of switch in order to better understand how some parameters, such as the shape of the beams or the actuation voltage, impact on the reliability of the device.Furthermore, the influence of continuous actuation stress on the reliability of dielectric-less switches has been investigated, comparing different designs and studying the variation of the main electrical parameters induced by the stress and the successive recovery phase.Other two critical issues investigated in this thesis are the sensitivity to EOS/ESD events of RF-MEMS switches under actuated and not-actuated conditions and their sensitivity to different kind of radiation, protons and X-rays.The sensitivity to EOS/ESD has been studied between RF-OUT and ground with no bias voltage applied (up-state membrane), and between RF-OUT and GND at different voltages (fully actuated / partially bended membrane). Moreover, the same devices have been characterized under HBM regime in order to study if any correlation between TLP tests and the Human Body Model exists for these devices.Concerning the radiation effects, the impact of 2MeV protons and l0keV x-rays radiation stresses has been analyzed at increasing radiation dose and during subsequent annealing at room temperature." @default.
• W2132587716 created "2016-06-24" @default.
• W2132587716 creator A5012178400 @default.
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• W2132587716 date "2011-01-27" @default.
• W2132587716 modified "2023-09-26" @default.
• W2132587716 title "Reliability and failure analysis of RF-MEMS switches for space applications" @default.
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