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- W2132588722 abstract "A global I-V parameter extraction methodology for multi-gate MOSFET compact model is presented for the first time. New L-dependent properties are proposed to enable the accurate modeling of transistors over a wide range of gate length using a single set of model parameters. The results are verified with FinFET experimental data with effective channel lengths from 30nm to 10um. For both n and p type devices, excellent agreement between the data and the model has been demonstrated." @default.
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- W2132588722 date "2010-03-01" @default.
- W2132588722 modified "2023-09-29" @default.
- W2132588722 title "Global parameter extraction for a multi-gate MOSFETs compact model" @default.
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- W2132588722 doi "https://doi.org/10.1109/icmts.2010.5466821" @default.
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