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• W2132590705 abstract "A physically based model has been formulated to represent temperature-dependent specific contact resistance. The new model can generate silicided contact resistance values at high temperatures and is capable of predicting high current behavior of silicided deep submicron devices. Implications for failure analysis of advanced silicided devices are also considered. Using the model, it has been demonstrated how current localization is affected by increased temperature, which is critical for predicting ESD reliability." @default.
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• W2132590705 date "2003-12-22" @default.
• W2132590705 modified "2023-09-23" @default.
• W2132590705 title "Modeling of temperature dependent contact resistance for analysis of ESD reliability" @default.
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• W2132590705 doi "https://doi.org/10.1109/relphy.2003.1197753" @default.
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