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- W2133034127 abstract "This paper describes composite-collector InP/InGaAs heterojunction bipolar transistors that exhibit high current density and good breakdown behavior simultaneously. The collector consists of 150-nm InGaAs and 150-nm lightly n -type doped InP. Additionally, a 30-nm-thick InGaAsP layer is sandwiched between them to minimize the accumulation of transit carriers. The proposed structure makes use of the space charge in the collector to reduce the collector-current multiplication coefficient. At high current density, the space charge decreases the electric-field intensity in the narrow-band-gap InGaAs and moves the high-electric-field region into the wide-band-gap InP. The fabricated transistors exhibit flat collector I - V curves, high current density of over 4 mA/µm 2 , and reasonably small knee voltage. They also show a peak f t of over 200 GHz and a peak f max of about 350 GHz at a current density of 2 mA/µm 2 . The ring oscillator IC based on the emitter-coupled-logic gate provides the gate propagation delay of 3.83 ps/stage." @default.
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- W2133034127 date "2004-04-01" @default.
- W2133034127 modified "2023-09-26" @default.
- W2133034127 title "High-Performance Composite-Collector InP/InGaAs Heterojunction Bipolar Transistors" @default.
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- W2133034127 doi "https://doi.org/10.1143/jjap.43.2243" @default.
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