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• W2133074518 abstract "The plasma process is often used in the fabrication of semiconductor wafers. However, due to the lack of real-time etching control, this may result in some unacceptable process performances and thus leads to significant waste and lower wafer yield. In order to maximize the product wafer yield, a timely and accurately process fault or abnormal detection in a plasma reactor is needed. Optical emission spectroscopy (OES) is one of the most frequently used metrologies in in-situ process monitoring. Even though OES has the advantage of non-invasiveness, it is required to provide a huge amount of information. As a result, the data analysis of OES becomes a big challenge. To accomplish real-time detection, this work employed the sigma matching method technique, which is the time series of OES full spectrum intensity. First, the response model of a healthy plasma spectrum was developed. Then, we defined a matching rate as an indictor for comparing the difference between the tested wafers response and the health sigma model. The experimental results showed that this proposal method can detect process faults in real-time, even in plasma etching tools." @default.
• W2133074518 created "2016-06-24" @default.
• W2133074518 creator A5039601666 @default.
• W2133074518 creator A5067295651 @default.
• W2133074518 date "2010-06-08" @default.
• W2133074518 modified "2023-10-16" @default.
• W2133074518 title "Real-Time Plasma Process Condition Sensing and Abnormal Process Detection" @default.
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• W2133074518 doi "https://doi.org/10.3390/s100605703" @default.
• W2133074518 hasPubMedCentralId "https://www.ncbi.nlm.nih.gov/pmc/articles/3247728" @default.
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