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• W2133201515 abstract "An ultra-thin, high reliability oxide-nitride-oxide (ONO) gate dielectric was formed using low pressure oxidation and chemical vapor deposition. A sub-0.25 μm device with high performance was fabricated for which the gate dielectric reliability was studied using both Fowler-Nordheim tunneling stress and hot carrier aging. The results from both techniques demonstrate that the device lifetime is longer than 100 years. Auger spectroscopy shows that there is about 9 at.% nitrogen at the SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> /Si interface. However, no transconductance degradation is observed." @default.
• W2133201515 created "2016-06-24" @default.
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• W2133201515 date "2000-06-01" @default.
• W2133201515 modified "2023-09-26" @default.
• W2133201515 title "High performance sub-0.25 /spl mu/m devices using ultrathin oxide-nitride-oxide gate dielectric formed with low pressure oxidation and chemical vapor deposition" @default.
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• W2133201515 doi "https://doi.org/10.1109/55.843162" @default.
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