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• W2133481315 abstract "Amplifiers for the next generation of T/R modules in future active array antennas are realized as monolithically integrated circuits (MMIC) on the basis of novel AlGaN/GaN (is a chemical material description) high electron mobility transistor (HEMT) structures. Both low-noise and power amplifiers are designed for X-band frequencies. The MMICs are designed, simulated, and fabricated using a novel via-hole microstrip technology. Output power levels of 6.8 W (38 dBm) for the driver amplifier (DA) and 20 W (43 dBm) for the high-power amplifier (HPA) are measured. The measured noise figure of the low-noise amplifier (LNA) is in the range of 1.5 dB. A T/R-module front-end with mounted GaN MMICs is designed based on a multi-layer low-temperature cofired ceramic technology (LTCC)." @default.
• W2133481315 created "2016-06-24" @default.
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• W2133481315 date "2009-06-22" @default.
• W2133481315 modified "2023-10-18" @default.
• W2133481315 title "X-band T/R-module front-end based on GaN MMICs" @default.
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• W2133481315 doi "https://doi.org/10.1017/s1759078709990389" @default.
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