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- W2134022890 abstract "For safety reasons, while handling fuel cells, hydrogen concentrations of 0.1 -3% and above need to be detected. Low power hydrogen sensors, based on a Field Effect Transistor (FET), have been in use for about 25 years. In the past platinum and palladium were often used as gas sensitive layers. Unfortunately in the required concentration range, the Pt based sensors have a poor selectivity at room temperature and were not stable at operating temperatures above 60degC. To solve this problem Pt with a porous tin oxide (SnO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> ) top layer is used as a chemically sensitive electrode in a Floating Gate Field Effect Transistor (FG -FET). The results show that the SnO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> film on Pt stabilizes the sensor signal response between room temperature and 135degC. Also the sensor response time with t <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>50</sub> < 10s is quite fast and the cross sensitivity to other gases compared to pure Pt is reduced." @default.
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- W2134022890 date "2007-01-01" @default.
- W2134022890 modified "2023-09-26" @default.
- W2134022890 title "Cross Sensitivity and Stability of FET - Based Hydrogen Sensors" @default.
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- W2134022890 doi "https://doi.org/10.1109/icsens.2007.4388582" @default.
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