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- W2134191559 abstract "In this letter, for the first time, a novel p-n-diode (PND) structure of SONOS-type thin-film transistor (TFT) nonvolatile memory (NVM) with embedded silicon nanocrystals (Si-NCs) in the silicon nitride layer using an in situ method is successfully demonstrated. This novel structure has many advantages, including high density and suitability for 3-D circuit integration. Hot-electron injection and hot-hole injection are used as the program and erase methods, respectively. The sensing current of the three-terminal PND-TFT NVM is 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-7</sup> A by the band-to-band tunneling current. A much larger memory window (> 12 V) and good data retention time (> 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>8</sup> s for 12% charge loss) are exhibited. The device appears to have great potential for system-on-panel applications." @default.
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- W2134191559 date "2010-11-01" @default.
- W2134191559 modified "2023-10-18" @default.
- W2134191559 title "A Novel p-n-Diode Structure of SONOS-Type TFT NVM With Embedded Silicon Nanocrystals" @default.
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- W2134191559 doi "https://doi.org/10.1109/led.2010.2064153" @default.
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