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- W2134395943 abstract "Chalchopyrite CIGS thin films were prepared by the two-stage growth technique. The processes were based on the controlled selenization of sputtering metallic precursors with elemental Se vapor in closed space. The modified selenization process by fitting data prevented the substantial losses and the formation of voids from the interior of absorbers. Accordingly, adhesion was improved and the grain was enlarged, which could span throughout the entire film from the surface towards the Mo back electrode. In addition, a single-phased CIGS thin film was obtained by this selenization process simultaneously." @default.
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- W2134395943 date "2008-05-01" @default.
- W2134395943 modified "2023-09-27" @default.
- W2134395943 title "Preparation of high quality CuIn<inf>1-x</inf>Ga<inf>x</inf>Se<inf>2</inf> thin films by modified selenization procedure of sequential sputtering metallic precursors" @default.
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- W2134395943 doi "https://doi.org/10.1109/pvsc.2008.4922892" @default.
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