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• W2134435755 abstract "In existing impact-ionization current (J <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>sub</sub> ) models for short-channel MOSFETs, various models for the characteristic ionization length (I) or the velocity-saturation region length (l <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>sat</sub> ) have been developed by using the polynomial-fitting method in order to model the bias dependence of the maximum electric field (E <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>m</sub> ) in the channel. This paper proposes a bias-voltage- and gate-length-dependent effective maximum electric field (E <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>m,eff</sub> ) based on energy-balance equation, aimed at obtaining an accurate expression of E <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>m</sub> to increase the accuracy of the I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>sub</sub> model for deep submicrometer devices. This new method overcomes the complicated modeling of I, avoids the extraction of different fitting constants for different devices, and enables unique extraction of the impact-ionization coefficients (A and B) for different devices. This improved model demonstrates excellent agreements with the numerical data of nMOSFETs from a 90-nm-technology wafer file. Only one unique set of parameters is needed to fit the data from devices with different biases and lengths for the same technology node. Moreover, since the lattice temperature (T <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>l</sub> ) is built in the formulation of E <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>m,eff</sub> , a compact I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>sub</sub> model with self-lattice-heating is developed, which also accounts for the excess substrate current observed in the SOI devices due to carrier heating in the channel." @default.
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• W2134435755 date "2008-09-01" @default.
• W2134435755 modified "2023-09-27" @default.
• W2134435755 title "A New Impact-Ionization Current Model Applicable to Both Bulk and SOI MOSFETs by Considering Self-Lattice-Heating" @default.
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• W2134435755 doi "https://doi.org/10.1109/ted.2008.927389" @default.
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