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- W2134842147 abstract "This paper examines the theoretical performance of GaAs MESFET logic gates and attempts to obtain a realistic comparison of GaAs vs Si devices under typical loading conditions imposed by large random logic arrays. GaAs was found to have a speed advantage of 3-6 over Si, depending on the operating voltage. Normally off type MESFET devices were attractive at gate lengths of 0.5µm, giving loaded delays of 105ps. Logic swings were 600mV requiring a threshold voltage control of ±50mV." @default.
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- W2134842147 date "1978-01-01" @default.
- W2134842147 modified "2023-09-27" @default.
- W2134842147 title "The performance of GaAs logic gates in LSI" @default.
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- W2134842147 doi "https://doi.org/10.1109/iedm.1978.189387" @default.
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