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• W2135090909 startingPage "N3180" @default.
• W2135090909 abstract "Deposition of high quality WNxCy barrier films at very low temperature using aerosol-assisted chemical vapor deposition (AACVD) is reported. The single-source tungsten nitrido complex, WN(NEt2)3, was designed to reduce the temperature required for WNxCy film deposition in an effort to minimize thermal stresses on neighboring layers in device structures. Using either pyridine or heptane as a solvent, WNxCy films were successfully deposited at temperatures from 100 to 650°C. Film growth in pyridine and heptane at low temperature (100–350°C and 125–550°C, respectively) showed weak temperature dependence consistent with mass-transfer limited growth. At higher temperature the growth rate decreased rapidly with apparent activation energy of 0.375 ± 0.057 eV. The effects of solvent choice on film properties including composition, crystallinity, density, and surface roughness are discussed. Films deposited at low temperature (<350°C) were highly smooth, amorphous and with a stoichiometry approaching W2NC; characteristics desirable for diffusion barrier applications. In Cu diffusion barrier tests, Cu (∼ 100 nm)/WNxCy (∼ 5.5 nm)/Si stacks subjected to a 500°C anneal for 30 min showed no indication of Cu diffusion or intermixing of layers, as verified by XRD, 4-point probe, SEM etch-pit test, and TEM." @default.
• W2135090909 created "2016-06-24" @default.
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• W2135090909 date "2014-12-06" @default.
• W2135090909 modified "2023-10-14" @default.
• W2135090909 title "Low Temperature Deposition of WN_xC_yDiffusion Barriers Using WN(NEt₂)₃as a Single-Source Precursor" @default.
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• W2135090909 doi "https://doi.org/10.1149/2.0251501jss" @default.
• W2135090909 hasPublicationYear "2014" @default.
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