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• W2135165781 abstract "TiO2 nanowires (NWs) were grown on a (1 0 0)-oriented silicon substrate by pulsed laser deposition. Our growth strategy involves consecutive deposition of a Au/Ti bilayer followed by annealing to promote TiO2 NW growth. Deposition at various laser energy densities suggests that vapor–liquid–solid growth of TiO2 is sensitive to Ti flux. Raman spectroscopy of NWs grown under optimized PLD-conditions reveals the rutile phase of TiO2 NWs. Optical measurements on the TiO2 NW arrays under light excitation at 355 nm wavelength show a strong and sharp photoluminescence peak at 3.41 eV, which we attribute to a direct recombination of photoinduced charge carriers." @default.
• W2135165781 created "2016-06-24" @default.
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• W2135165781 date "2014-09-01" @default.
• W2135165781 modified "2023-10-02" @default.
• W2135165781 title "Pulsed laser deposition growth of rutile TiO2 nanowires on Silicon substrates" @default.
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• W2135165781 doi "https://doi.org/10.1016/j.apsusc.2014.05.123" @default.
• W2135165781 hasPublicationYear "2014" @default.
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