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- W2135249004 abstract "Summary form only given. So far 1.3 /spl mu/m AlGaInAs-InP strained MQW lasers have achieved high characteristic temperature T/sub 0/ of 120 K and high operating temperature of 185 C. In this paper, we evaluated temperature dependence of the gain characteristics in AlGaInAs-InP lasers, and found that the high T/sub 0/ was caused by the smaller temperature dependence of the spontaneous emission efficiency than that of GaInAsP-InP lasers." @default.
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- W2135249004 date "1997-01-01" @default.
- W2135249004 modified "2023-09-24" @default.
- W2135249004 title "Temperature dependence of gain characteristics in 1.3-/spl mu/m AlGaInAs/InP compressively strained multiple quantum well semiconductor lasers" @default.
- W2135249004 cites W2001841048 @default.
- W2135249004 doi "https://doi.org/10.1109/leos.1997.645308" @default.
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