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• W2135554837 abstract "This paper reports the investigation of MOCVD (metal organic chemical vapor deposition) TiN, and IMP (ionized metal plasma) Ta and TaN thin films as barrier layers for copper metallization. Evaluation of both deposition techniques, including step coverage, Cu adhesion, Cu diffusion and selectivity with regard to the Cu-CMP process have been performed. Successful implementation with copper metallization in high aspect ratio line and via patterns is reported." @default.
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• W2135554837 date "2002-11-27" @default.
• W2135554837 modified "2023-09-25" @default.
• W2135554837 title "Comparison of barrier materials and deposition processes for copper integration" @default.
• W2135554837 cites W2020770344 @default.
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• W2135554837 doi "https://doi.org/10.1109/iitc.1998.704928" @default.
• W2135554837 hasPublicationYear "2002" @default.
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