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• W2135818056 abstract "MOSFETs with gate length down to 17 nm are reported. To suppress the short channel effect, a novel self-aligned double-gate MOSFET, FinFET, is proposed. By using boron-doped Si/sub 0.4/Ge/sub 0.6/ as a gate material, the desired threshold voltage was achieved for the ultrathin body device. The quasiplanar nature of this new variant of the vertical double-gate MOSFETs can be fabricated relatively easily using the conventional planar MOSFET process technologies." @default.
• W2135818056 created "2016-06-24" @default.
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• W2135818056 date "2000-01-01" @default.
• W2135818056 modified "2023-10-18" @default.
• W2135818056 title "FinFET-a self-aligned double-gate MOSFET scalable to 20 nm" @default.
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• W2135818056 doi "https://doi.org/10.1109/16.887014" @default.
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