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- W2135846289 abstract "We report on optoelectrical properties of freestanding silicon nanocrystals (Si-ncs) in poly[methoxy-ethylexyloxy-phenylenevinilene] (MEH-PPV). Electrochemical etching and pulverization of fine porous silicon films are used to prepare surfactant free boron- and phosphorous-doped Si-ncs with the same size distribution. We studied doped-Si-ncs/MEH-PPV blends with high concentrations of the Si-ncs in the matrix. A considerable increase of dark conductivity is observed when doped Si-ncs are introduced in the polymer. We find that the studied blends show a higher stability compared to pure polymer films. The results obtained can be explained by the reduction of the formation of carbonyl type groups in MEH-PPV and of the oxygen diffusion inside of the polymer matrix. Improved stability of the composites makes them as an attractive material for no-toxic solar cell production." @default.
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- W2135846289 date "2008-05-01" @default.
- W2135846289 modified "2023-09-25" @default.
- W2135846289 title "Transport and stability of doped freestanding silicon nanocrystals and MEH-PPV blends" @default.
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- W2135846289 doi "https://doi.org/10.1109/pvsc.2008.4922459" @default.
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