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- W2135904581 abstract "In this article, we demonstrate that 200 nm contact-hole resist patterns can easily be shrunk to less than 35 nm after a simple thermal-flow procedure. The optimal thermal-flow temperature was determined by differential-scanning calorimetry and wafer-curvature measurement. The effects of postapplied baked temperature, thermal-flow temperature, baking time period, and pattern density were evaluated. The resist after thermal flow is more intact than during dry-etching processes. The resist can overcome the resist-thickness loss during the thermal-flow procedure." @default.
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- W2135904581 date "2002-11-01" @default.
- W2135904581 modified "2023-10-17" @default.
- W2135904581 title "Thermal-flow techniques for sub-35 nm contact-hole fabrication in electron-beam lithography" @default.
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- W2135904581 doi "https://doi.org/10.1116/1.1526352" @default.
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