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- W2136000079 abstract "Abstract Drain‐current responses of GaN MESFETs with a semi‐insulating buffer layer are calculated when the drain voltage and/or the gate voltage are changed abruptly, and pulsed I‐V curves are derived from them. It is shown that so‐called current collapse or current slump is not so dependent on the gate length L G (0.3 μm – 1 μm), and this is essentially determined by a deep‐acceptor density N DA in the buffer layer. L G and N DA dependence of gate lag is also studied, indicating that the gate lag is weaker for longer L G and the lag rate becomes high with N DA , although it may show a saturation behaviour. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
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- W2136000079 date "2007-06-01" @default.
- W2136000079 modified "2023-10-18" @default.
- W2136000079 title "Analysis of buffer‐related lag phenomena and current collapse in GaN FETs" @default.
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- W2136000079 doi "https://doi.org/10.1002/pssc.200674715" @default.
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