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- W2136133090 abstract "Electron pulse annealing has been used to activate implanted layers in InP without the phosphorus loss dominance in earlier work. Reduced pulse energies were employed at which the phosphorus loss could be curtailed but which necessitated supplemental thermal heating of the substrate for activation. Relatively shallow implants (75 keV, 4 × 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>14</sup> Si+cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-2</sup> ) so annealed show minimum yields of ∼ 5% from backscattering and are doped to over 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>19</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-3</sup> with mobilities of 500 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> V <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-1</sup> sec <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-1</sup> ." @default.
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- W2136133090 date "1982-01-01" @default.
- W2136133090 modified "2023-10-17" @default.
- W2136133090 title "Pulse annealing of implanted InP with minimal phosphorus loss" @default.
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- W2136133090 doi "https://doi.org/10.1109/edl.1982.25453" @default.
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