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- W2136353345 abstract "Radiation hardness is tested for 4H-SiC n-p-n bipolar junction transistors designed for 1200-V breakdown voltage by implanting MeV protons and carbon ions at different doses and energies. The current gain is found to be a very sensitive parameter, and a fluence as low as 1 × 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>7</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-2</sup> of 10 MeV <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>12</sup> C can be clearly detected in the forward-output characteristics, I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>C</sub> (V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>CE</sub> ) . At this low dose, no influence of ion radiation is seen in the open-collector characteristics, I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>B</sub> (V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>EB</sub> ), or the reverse bias leakage and breakdown properties. Moreover, by annealing the implanted devices at 420°C for 30 min, a complete recovery of the electrical characteristics is accomplished." @default.
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- W2136353345 date "2010-07-01" @default.
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- W2136353345 title "Low-Temperature Annealing of Radiation-Induced Degradation in 4H-SiC Bipolar Junction Transistors" @default.
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- W2136353345 doi "https://doi.org/10.1109/led.2010.2047237" @default.
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