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• W2136422104 abstract "To explore polycrystalline diamond (poly-C) as a packaging material for wireless integrated microsystems (WIMS), a new fabrication technology has been developed to fabricate thick WIMS packaging panels with built-in interconnects. An ultrafast poly-C growth technique, used in this study, involves electrophoresis seeding and filling of dry-etched Si channels by undoped poly-C followed by removal of Si. A second layer of highly B-doped poly-C, which acts as a built-in interconnect, is deposited on the backside of undoped poly-C layer. The lowest resistivity values demonstrated on control samples are in the range from 0.003 to 0.31 /spl Omega/-cm. The results show that, by increasing the poly-C growth areas through the use of 2-/spl mu/m-wide Si channels, the poly-C growth time can be reduced by a factor in the range from 2.75 to 10.5 depending upon the aspect ratio of Si channels. The poly-C packaging technology, which is expected to provide new structures/concepts in MEMS/WIMS packaging, is being reported for the first time." @default.
• W2136422104 created "2016-06-24" @default.
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• W2136422104 date "2004-06-01" @default.
• W2136422104 modified "2023-10-18" @default.
• W2136422104 title "The Fabrication of All-Diamond Packaging Panels With Built-In Interconnects for Wireless Integrated Microsystems" @default.
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• W2136422104 doi "https://doi.org/10.1109/jmems.2004.828739" @default.
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