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- W2136592008 abstract "Two-dimensional MOS device simulation programs such as MINIMOS left bracket 1 right bracket are limited in their validity due to assumptions made in defining the initial two-dimensional source/drain profiles. The two options available to define source/drain regions both construct a two-dimensional profile from one-dimensional profiles normal to the surface. Inaccuracies in forming these source/drain profiles can be expected to effect predicted device characteristics as channel dimensions of the device are reduced. This paper examines these changes by interfacing numerically similated two dimensional source/drain profiles to MINIMOS and comparing predicted I//D-V//D characteristics with 2-D interfacing, 2-D profiles constructed from interfaced 1-D profiles and MINIMOS self generated profiles. Data obtained for simulations of 3 mu m N and P channel devices are presented." @default.
- W2136592008 created "2016-06-24" @default.
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- W2136592008 date "1985-12-01" @default.
- W2136592008 modified "2023-09-27" @default.
- W2136592008 title "CHANGES IN PREDICTED MOS DEVICE CHARACTERISTICS DUE TO THE USE OF TWO DIMENSIONAL SOURCE/DRAIN PROFILES." @default.
- W2136592008 hasPublicationYear "1985" @default.
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