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- W2136713920 abstract "In this paper, we discuss the metrology concepts that can be applied to characterize dopant/carrier profiles in FinFET-based structures. We demonstrate their value in a study of dose retention and activation when traditional ion implantation is used for junction formation at different tilt angles (45° and 10°). The high tilt angle is a simple approach to reach high sidewall doping and modest conformality. Although in practice this approach is of limited value, as shadowing caused on neighboring fins will limit applicability, it can serve as a reference for the more common approach based on a low tilt angle (<; 10°)." @default.
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- W2136713920 date "2011-06-01" @default.
- W2136713920 modified "2023-10-14" @default.
- W2136713920 title "Dopant and carrier profiling for 3D-device architectures" @default.
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- W2136713920 doi "https://doi.org/10.1109/iwjt.2011.5970012" @default.
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