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• W2136901011 endingPage "03CC01" @default.
• W2136901011 startingPage "03CC01" @default.
• W2136901011 abstract "The effect of drain bias ( V DS ) on the negative gate bias and illumination stress (NBIS) stability of amorphous InGaZnO thin-film transistors (a-IGZO TFTs) was investigated. The evolution of transfer characteristics was explored in terms of NBIS duration. In the initial stage (<1000 s) of the NBIS with grounded V DS , the transfer characteristics negatively shifted with an insignificant change in subthreshold swing owing to hole trapping at an IGZO/gate insulator interface. On the other hand, on-current degradation was observed and was enhanced as NBIS duration increased. The results indicate that NBIS-induced defects were created above the Fermi level energy. NBIS-induced defect creation was enhanced at a positive V DS bias of 40 V. However, it was found that NBIS-induced defect creation can be suppressed by a negative V DS bias, as the absolute value of V DS was larger than that of gate voltage during NBIS." @default.
• W2136901011 created "2016-06-24" @default.
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• W2136901011 date "2014-01-31" @default.
• W2136901011 modified "2023-10-14" @default.
• W2136901011 title "Effect of drain bias on negative gate bias and illumination stress induced degradation in amorphous InGaZnO thin-film transistors" @default.
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• W2136901011 doi "https://doi.org/10.7567/jjap.53.03cc01" @default.
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