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- W2137093153 abstract "High-performance polycrystalline silicon (poly-Si) thin-film transistors (TFTs) have been fabricated using metal-induced crystallization followed by laser annealing (L-MIC). Laser annealing after MIC was found to yield a major improvement to the electrical characteristics of poly-Si TFTs. At a laser fluence of 330 mJ/cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> , the field effect mobility increased from 71 to 239 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> /Vs, and the minimum leakage current reduced from around 3.0×10/sup -12/ A/μm to 2.9×10/sup -13/ A/μm at a drain voltage of 5 V. In addition, the dependence of the TFT characteristics on the laser energy density was much weaker than that for conventional excimer laser annealed poly-Si TFTs." @default.
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- W2137093153 date "2003-01-01" @default.
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- W2137093153 title "High-performance poly-Si TFTs made by Ni-mediated crystallization through low-shot laser annealing" @default.
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- W2137093153 doi "https://doi.org/10.1109/led.2002.807019" @default.
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