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- W2137250615 startingPage "10468" @default.
- W2137250615 abstract "A model describing film growth from hyperthermal (ensuremath{sim}1--${10}^{3}$ eV) species impinging on substrates is presented. The model involves a shallow subsurface implantation process called ``subplantation,'' energy loss, preferential displacement of atoms with low displacement energy ${mathit{E}}_{mathit{d}}$, leaving the high-${mathit{E}}_{mathit{d}}$ atoms intact, sputtering of substrate material, and inclusion of a new phase due to incorporation of a high density of interstitials in a host matrix. Epitaxial or preferred orientation may result from the angular dependence of the ${mathit{E}}_{mathit{d}}$ and the boundary conditions imposed by the host matrix, i.e., the ``mold'' effect. The discussion focuses on deposition of carbon diamondlike films, but examples of other systems, such as Si, Ge, and Ag, are provided as well. The model is supported by classical-ion-trajectory calculations and experimental data. The calculations probe the role of ion range, local concentration, backscattering coefficient, sputtering yield, and ion-induced damage in film evolution. The experimental data emphasize in situ surface-analysis studies of film evolution. The physical parameters of the deposition process that are treated are as follows: (i) nature of bombarding species (${mathrm{C}}^{+}$ versus ${mathrm{C}}^{mathrm{ensuremath{-}}}$, ${mathrm{C}}^{mathrm{ensuremath{-}}}$ versus ${mathrm{C}}_{2}^{mathrm{ensuremath{-}}}$, ${mathrm{C}}_{mathit{n}}$${mathrm{H}}_{mathit{m}}^{+}$, ${mathrm{Ar}}^{+}$, and ${mathrm{H}}^{+}$), (ii) ion energy, (iii) type of substrate, and (iv) substrate temperature during deposition." @default.
- W2137250615 created "2016-06-24" @default.
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- W2137250615 date "1990-05-15" @default.
- W2137250615 modified "2023-10-18" @default.
- W2137250615 title "Subplantation model for film growth from hyperthermal species" @default.
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- W2137250615 doi "https://doi.org/10.1103/physrevb.41.10468" @default.
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