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• W2137304710 abstract "The “classical” Volger-Petritz-Berger barrier model of the thin polycrystalline layer is developed, thereby enabling a coherent mathematical description of this model in stationary conditions to be given. The symmetric and asymmetric barriers as well as the effect of the thickness of the grain boundary region on the height of the potential barrier (the diffusion barrier) are analysed. The model presented is based on abrupt low-high-type semiconductor structures and is complementary to and a development of theoretical models with Schottky barriers, p-n junctions, heterojunctions or trapping. The development of the trapping model, which is the most advanced model theoretically and which is particularly useful for polycrystalline layers of elemental semiconductors, is outlined. The literature quoted enables the results obtained with both models to be compared. The present results are applicable in analyses of the electrical properties of polycrystalline solar cells." @default.
• W2137304710 created "2016-06-24" @default.
• W2137304710 creator A5068472956 @default.
• W2137304710 date "1984-11-01" @default.
• W2137304710 modified "2023-10-16" @default.
• W2137304710 title "Modelling of semiconductor polycrystalline layers in the stationary state" @default.
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• W2137304710 doi "https://doi.org/10.1016/0379-6787(84)90088-7" @default.
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