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• W2137305524 abstract "Doped channel pseudomorphic In/sub 0.49/Ga/sub 0.51/P/In/sub 0.20/Ga/sub 0.80/As/GaAs heterostructure field effect transistors have been fabricated on GaAs substrate with 0.25 /spl mu/m T-gates and self-aligned ohmic contact enhancement. By introducing the channel doping and reducing the series resistances, a high current density of 500 mA/mm is obtained in combination with cut off frequencies of f/sub T/=68 GHz and f/sub max/=160 GHz. The channel doping did not affect the RF-performance of the device essentially, which is additionally reflected in noise figures below 1.0 dB with an associated gain of 14.5 dB at 12 GHz." @default.
• W2137305524 created "2016-06-24" @default.
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• W2137305524 date "1995-06-01" @default.
• W2137305524 modified "2023-09-23" @default.
• W2137305524 title "InGaP/InGaAs HFET with high current density and high cut-off frequencies" @default.
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• W2137305524 doi "https://doi.org/10.1109/55.790728" @default.
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