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- W2137582007 abstract "Strained-silicon MOSFETs of both high breakdown voltage and low leakage current were fabricated by employing a thick strained-silicon layer. It is demonstrated that proper control of junction depth can drastically reduce leakage current although misfit dislocations exist at the strained-silicon/SiGe interface, and that breakdown voltage of strained-silicon MOSFETs kept the same high value as silicon MOSFETs even at elevated temperatures. RF performances such as f/sub T/, noise, and FR-power-amplifier efficiency were improved by this technology." @default.
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- W2137582007 date "2005-07-27" @default.
- W2137582007 modified "2023-09-26" @default.
- W2137582007 title "Strained-silicon MOSFETs of low leakage current and high breakdown voltage for analog applications" @default.
- W2137582007 doi "https://doi.org/10.1109/.2005.1469209" @default.
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