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- W2137799406 abstract "With optical/electronic devices of the next generation in mind, we provide a guideline for the growth of homoepitaxial diamond films that possess higher crystalline quality, higher chemical purity, and a higher carbon isotopic ratio. A custom-built microwave plasma-assisted chemical vapor deposition system was constructed to achieve these requirements. To improve both the purity and crystalline quality of homoepitaxial diamond films, an advanced growth condition was applied: higher oxygen concentration in the growth ambient. Under this growth condition for high-quality diamond, a thick diamond film of ≥30 μm was deposited reproducibly while maintaining high purity and a flat surface. Then, combining this advanced growth condition for non-doped diamond with a unique doping technique that provides parts-per-billion order doping, single-color centers of either nitrogen-vacancy or silicon-vacancy centers that show excellent properties were formed. The new idea of using these color centers as a probe for detecting tiny amounts of impurities was presented. These advanced growth and characterization techniques are expected to open up new fields of diamond research that require extremely low-impurity concentration, for use in power devices and quantum information devices." @default.
- W2137799406 created "2016-06-24" @default.
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- W2137799406 date "2015-10-21" @default.
- W2137799406 modified "2023-10-14" @default.
- W2137799406 title "Homoepitaxial diamond film growth: High purity, high crystalline quality, isotopic enrichment, and single color center formation" @default.
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- W2137799406 doi "https://doi.org/10.1002/pssa.201532449" @default.
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