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• W2137900832 endingPage "1415" @default.
• W2137900832 startingPage "1406" @default.
• W2137900832 abstract "Deep submicron strained-Si n-MOSFETs were fabricated on strained Si/relaxed Si/sub 0.8/Ge/sub 0.2/ heterostructures. Epitaxial layer structures were designed to yield well-matched channel doping profiles after processing, allowing comparison of strained and unstrained Si surface channel devices. In spite of the high substrate doping and high vertical fields, the MOSFET mobility of the strained-Si devices is enhanced by 75% compared to that of the unstrained-Si control devices and the state-of-the-art universal MOSFET mobility. Although the strained and unstrained-Si MOSFETs exhibit very similar short-channel effects, the intrinsic transconductance of the strained Si devices is enhanced by roughly 60% for the entire channel length range investigated (1 to 0.1 /spl mu/m) when self-heating is reduced by an ac measurement technique. Comparison of the measured transconductance to hydrodynamic device simulations indicates that in addition to the increased low-field mobility, improved high-field transport in strained Si is necessary to explain the observed performance improvement. Reduced carrier-phonon scattering for electrons with average energies less than a few hundred meV accounts for the enhanced high-field electron transport in strained Si. Since strained Si provides device performance enhancements through changes in material properties rather than changes in device geometry and doping, strained Si is a promising candidate for improving the performance of Si CMOS technology without compromising the control of short channel effects." @default.
• W2137900832 created "2016-06-24" @default.
• W2137900832 creator A5001288448 @default.
• W2137900832 creator A5018615810 @default.
• W2137900832 creator A5058999308 @default.
• W2137900832 date "2000-07-01" @default.
• W2137900832 modified "2023-10-18" @default.
• W2137900832 title "Fabrication and analysis of deep submicron strained-Si n-MOSFET's" @default.
• W2137900832 cites W1991122941 @default.
• W2137900832 cites W1994350206 @default.
• W2137900832 cites W2005280171 @default.
• W2137900832 cites W2006173047 @default.
• W2137900832 cites W2006812897 @default.
• W2137900832 cites W2019473624 @default.
• W2137900832 cites W2029383455 @default.
• W2137900832 cites W2050515903 @default.
• W2137900832 cites W2064198412 @default.
• W2137900832 cites W2067045824 @default.
• W2137900832 cites W2076135609 @default.
• W2137900832 cites W2086034031 @default.
• W2137900832 cites W2092411913 @default.
• W2137900832 cites W2096906472 @default.
• W2137900832 cites W2104370605 @default.
• W2137900832 cites W2111475829 @default.
• W2137900832 cites W2139424966 @default.
• W2137900832 cites W2144765907 @default.
• W2137900832 cites W2147079631 @default.
• W2137900832 cites W2153876234 @default.
• W2137900832 cites W2161454483 @default.
• W2137900832 doi "https://doi.org/10.1109/16.848284" @default.
• W2137900832 hasPublicationYear "2000" @default.
• W2137900832 type Work @default.
• W2137900832 sameAs 2137900832 @default.
• W2137900832 citedByCount "353" @default.
• W2137900832 countsByYear W21379008322012 @default.
• W2137900832 countsByYear W21379008322013 @default.
• W2137900832 countsByYear W21379008322014 @default.
• W2137900832 countsByYear W21379008322015 @default.
• W2137900832 countsByYear W21379008322016 @default.
• W2137900832 countsByYear W21379008322017 @default.
• W2137900832 countsByYear W21379008322018 @default.
• W2137900832 countsByYear W21379008322019 @default.
• W2137900832 countsByYear W21379008322020 @default.
• W2137900832 countsByYear W21379008322021 @default.
• W2137900832 countsByYear W21379008322022 @default.
• W2137900832 crossrefType "journal-article" @default.
• W2137900832 hasAuthorship W2137900832A5001288448 @default.
• W2137900832 hasAuthorship W2137900832A5018615810 @default.
• W2137900832 hasAuthorship W2137900832A5058999308 @default.
• W2137900832 hasConcept C106782819 @default.
• W2137900832 hasConcept C119599485 @default.
• W2137900832 hasConcept C127413603 @default.
• W2137900832 hasConcept C145598152 @default.
• W2137900832 hasConcept C159985019 @default.
• W2137900832 hasConcept C165801399 @default.
• W2137900832 hasConcept C172385210 @default.
• W2137900832 hasConcept C192245399 @default.
• W2137900832 hasConcept C192562407 @default.
• W2137900832 hasConcept C2776390347 @default.
• W2137900832 hasConcept C2778413303 @default.
• W2137900832 hasConcept C2779283907 @default.
• W2137900832 hasConcept C2779667780 @default.
• W2137900832 hasConcept C49040817 @default.
• W2137900832 hasConcept C544956773 @default.
• W2137900832 hasConcept C57863236 @default.
• W2137900832 hasConcept C65053842 @default.
• W2137900832 hasConcept C79794668 @default.
• W2137900832 hasConcept C97346530 @default.
• W2137900832 hasConceptScore W2137900832C106782819 @default.
• W2137900832 hasConceptScore W2137900832C119599485 @default.
• W2137900832 hasConceptScore W2137900832C127413603 @default.
• W2137900832 hasConceptScore W2137900832C145598152 @default.
• W2137900832 hasConceptScore W2137900832C159985019 @default.
• W2137900832 hasConceptScore W2137900832C165801399 @default.
• W2137900832 hasConceptScore W2137900832C172385210 @default.
• W2137900832 hasConceptScore W2137900832C192245399 @default.
• W2137900832 hasConceptScore W2137900832C192562407 @default.
• W2137900832 hasConceptScore W2137900832C2776390347 @default.
• W2137900832 hasConceptScore W2137900832C2778413303 @default.
• W2137900832 hasConceptScore W2137900832C2779283907 @default.
• W2137900832 hasConceptScore W2137900832C2779667780 @default.
• W2137900832 hasConceptScore W2137900832C49040817 @default.
• W2137900832 hasConceptScore W2137900832C544956773 @default.
• W2137900832 hasConceptScore W2137900832C57863236 @default.
• W2137900832 hasConceptScore W2137900832C65053842 @default.
• W2137900832 hasConceptScore W2137900832C79794668 @default.
• W2137900832 hasConceptScore W2137900832C97346530 @default.
• W2137900832 hasIssue "7" @default.
• W2137900832 hasLocation W21379008321 @default.
• W2137900832 hasOpenAccess W2137900832 @default.
• W2137900832 hasPrimaryLocation W21379008321 @default.
• W2137900832 hasRelatedWork W1984929151 @default.
• W2137900832 hasRelatedWork W1985160683 @default.
• W2137900832 hasRelatedWork W2003213408 @default.
• W2137900832 hasRelatedWork W2006805090 @default.
• W2137900832 hasRelatedWork W2074177530 @default.
• W2137900832 hasRelatedWork W2094216457 @default.
• W2137900832 hasRelatedWork W2106096608 @default.

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