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- W21379885 abstract "In organic transistors, generally SiO2 is used as the gate insulator for their high quality and commercial availability despite its relatively low dielectric constant (~ 3.9) which is responsible for high operating voltage of organic transistors. We have fabricated low operating voltage pentacene based organic field effect transistors (OFETs) with high-k STO gate dielectric. The operating voltage of OFETs is reduced by a factor of ten with STO gate dielectric. Pentacene OFETs show operating voltage < 5 V, high charge carrier mobility (1.3 cm2/Vs) and high on–off ratio (106)." @default.
- W21379885 created "2016-06-24" @default.
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- W21379885 date "2014-01-01" @default.
- W21379885 modified "2023-09-26" @default.
- W21379885 title "Low Voltage Pentacene Organic Field Effect Transistors with High-K Gate Dielectric" @default.
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- W21379885 doi "https://doi.org/10.1007/978-3-319-03002-9_233" @default.
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