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- W2138122672 abstract "We have investigated the thermal cycling properties of critical and return currents in Bi <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> Sr <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> CaCu <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> (Bi-2212) stacks. The stacks with an area of 30 times 40 mum <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> were fabricated by self-planarizing process. The samples were coated by overlying layers of SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> and AZ-5206E photoresist. The current-voltage characteristics of the stacks exhibited large hysteresis and multiple branches, which can be explained by a series connection of highly capacitive Josephson junctions. The observed temperature dependence of critical current IC(T) at low temperatures was found to agree with Ambegaokar and Baratoff (AB) relation. The return current I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>r</sub> (T) stayed almost constant up to about 40 K, but at higher temperatures the I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>r</sub> (T) gradually increased with increasing temperature and fell on the AB line for all stacks. No apparent degradation of the critical and return currents was observed during repeated thermal cycling (up to 100 cycles) between 300 K and 77 K. This suggests that the Bi-2212 stacks fabricated by the self-planarizing process have sufficient stability for thermal cycling." @default.
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- W2138122672 date "2008-09-01" @default.
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- W2138122672 title "Thermal Cycling Properties of Bi$_2$Sr$_2$CaCu$_2$O$_x$ Stacks Fabricated by Self-Planarizing Process" @default.
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- W2138122672 doi "https://doi.org/10.1109/tasc.2008.2000907" @default.
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