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- W2138180122 abstract "Zinc phosphide (Zn <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> P <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> ) is a promising alternative to traditional materials (e.g. CIGS, CdTe, a-Si) for thin film photovoltaics. Open circuit voltage in Zn <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> P <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> cells has been limited by Fermi-level pinning due to surfaces states and heterojunction interdiffusion, motivating the need to prepare interfaces that are electrically passive and chemically inert. We investigated the surface chemistry of Zn <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> P <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> via etching with bromine in methanol and passivation with ammonium sulfide in t-butanol. The treatment decreases surface oxidation as determined by x-ray photoelectron spectroscopy and provides a stable, low-defect interface as monitored by steady-state photoluminescence. Magnesium Schottky diodes fabricated with sulfur-passivated interfaces show evidence of enhanced barrier heights in comparison to control devices." @default.
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- W2138180122 date "2008-05-01" @default.
- W2138180122 modified "2023-09-25" @default.
- W2138180122 title "Synthesis and surface chemistry of Zn<inf>3</inf>P<inf>2</inf>" @default.
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- W2138180122 doi "https://doi.org/10.1109/pvsc.2008.4922747" @default.
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