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- W2138908082 abstract "Well edge proximity effect caused by ion scattering during implantation in highly-scaled CMOS technology was explored from a process and physics point of view. TCAD simulation was employed to visualize the internal change of the MOSFETs. A new compact model for SPICE was proposed using physics-based understanding and was calibrated with experimental silicon test sets. Circuit simulation using the proposed model was conducted to evaluate the improvement in accuracy" @default.
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- W2138908082 date "2006-01-18" @default.
- W2138908082 modified "2023-10-18" @default.
- W2138908082 title "Modeling well edge proximity effect on highly-scaled MOSFETs" @default.
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- W2138908082 doi "https://doi.org/10.1109/cicc.2005.1568798" @default.
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