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- W2138994972 abstract "Nondestructive methods for the evaluation of film thicknesses in the stack of thin film electroluminescence devices are important tools in development, in degradation studies, and even in research concerning the basic processes in these devices. A simple model of the operation of these devices allows for a fitting procedure of the transferred charge/applied voltage characteristic, yielding the capacities of the semiconductor and dielectric films separately. Their thicknesses on the other hand can be assessed by Rutherford backscattering (RBS). With known values of the dielectric constants their comparison results in good agreement assuming a density of the vacuumdeposited films 5% less than the bulk values.Zerstorungsfreie Mesmethoden fur die Dicke der Filme in Dunnfilm-Elektrolumineszenz-Bauelementen sind sowohl fur die Kontrolle der Entwurfsziele, in Degradations-Untersuchungen als auch fur die Forschung zu Grundprozessen in solchen Strukturen wichtig. Ein einfaches Modell dieses Bauelements ermoglicht die Bestimmung der Kapazitaten der Halbleiter- und Isolatorfilme durch Anpassung der gemessenen Abhangigkeit der transferierten Ladung von der angelegten Spannung. Die Dicken der Einzel-Filme konnen andererseits aus Rutherford-Ruckstreumessungen (RBS) bestimmt werden. Der Vergleich liefert Werte fur die Dielektrizitatskonstanten, die von den bekannten Volumenwerten etwas abweichen, aber durch die plausible Annahme einer 5% geringeren Dichte der aufgedampften Filme in Ubereinstimmung gebracht werden konnen." @default.
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- W2138994972 date "1993-09-16" @default.
- W2138994972 modified "2023-09-22" @default.
- W2138994972 title "Measuring on thin film electroluminescent devices" @default.
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- W2138994972 doi "https://doi.org/10.1002/pssa.2211390125" @default.
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