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• W2139096489 abstract "A dipole moment model explaining V <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>t</inf> tuning in HfSiON gated nFETs is proposed and its impact on performance and reliability is presented. La, Sc, Er, and Sr dopants are utilized due to their differing electronegativities and ionic radii. These dopants tune V <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>t</inf> in the range of 250-600 mV. V <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>t</inf> tuning is found to be proportional to the net dipole moment associated with the Hf-O and rare earth (RE)-O bonds at the high-k/SiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> interface. The magnitude of this interfacial dipole moment is determined by the electronegativities and ionic radii of the RE cations. LaO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</inf> is the most effective dopant based on V <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>t</inf> , mobility, and reliability." @default.
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• W2139096489 date "2007-06-01" @default.
• W2139096489 modified "2023-10-17" @default.
• W2139096489 title "Dipole Moment Model Explaining nFET V<inf>t</inf> Tuning Utilizing La, Sc, Er, and Sr Doped HfSiON Dielectrics" @default.
• W2139096489 doi "https://doi.org/10.1109/vlsit.2007.4339730" @default.
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