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- W2139237928 abstract "This brief discusses a benchmarking methodology for the evaluation of performance parameters (g/sub mmax/ and I/sub dsat/) of MOSFETs with alternative gate dielectrics. It is shown that assuming ideal scaling for either or with electrical oxide thickness (g/sub mmax/ or I/sub dsat/ /spl prop/ T/sub oxinv//sup -/spl alpha// with /spl alpha/ = 1) instead of using experimental scaling trends for a baseline dielectric results in unrealistically pessimistic conclusions about the performance of alternative gate dielectrics. Factors In addition to mobility reduction which can contribute to sub-ideal scaling (/spl alpha/ < 1) for any dielectric are discussed. This bench marking methodology for performance evaluation is demonstrated for oxynitride gate dielectric films with equivalent oxide thickness (EOT) approaching 11 /spl Aring/." @default.
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- W2139237928 date "2003-12-01" @default.
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- W2139237928 title "On the evaluation of performance parameters of MOSFETs with alternative gate dielectrics" @default.
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- W2139237928 doi "https://doi.org/10.1109/ted.2003.819251" @default.
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