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- W2139272670 abstract "We propose N-polar normally-off InN-channel high-electron mobility transistors (HEMTs). A calculated energy band diagram shows full depletion of a quantum well channel provided by a negative polarization charge at an InN-channel/GaN-cap junction. For a 100 nm long gate-length HEMT with a 3 nm thick InN channel, 0.4 nm GaN cap and 4 nm thick HfO2/ZrO2 insulator we calculate a threshold voltage VT = 0.5 V and a transconductance of 3 S mm−1. Selective plasma etching of the GaN cap over the InN channel may facilitate monolithic integration of normally-off and -on InN channel HEMTs in a new generation of extremely fast digital circuits." @default.
- W2139272670 created "2016-06-24" @default.
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- W2139272670 date "2014-02-12" @default.
- W2139272670 modified "2023-10-07" @default.
- W2139272670 title "Proposal of normally-off InN-channel high-electron mobility transistors" @default.
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- W2139272670 doi "https://doi.org/10.1088/0268-1242/29/3/035015" @default.
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