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- W2139363987 abstract "High performance metal-gate/high-κ/Ge n-MOSFETs are reached with low 73 Ω/sq sheet resistance (R <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>s</sub> ), 1.10 ideality factor, 0.95 nm EOT, small 106 mV/dec sub-threshold slope (SS), good 285 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> /Vs high-field (1 MV/cm) mobility and low 37 mV ΔV <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>t</sub> PBTI (85°C, 1 hr). This is achieved by using 30-ns laser annealing that leads to 57% higher gate capacitance, better n <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>+</sup> /p junction and 10X better I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ON</sub> /I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>OFF</sub> ." @default.
- W2139363987 created "2016-06-24" @default.
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- W2139363987 date "2010-12-01" @default.
- W2139363987 modified "2023-09-27" @default.
- W2139363987 title "Higher κ metal-gate/high-κ/Ge n-MOSFETs with &#60;1 nm EOT using laser annealing" @default.
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- W2139363987 doi "https://doi.org/10.1109/iedm.2010.5703385" @default.
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