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• W2139567250 abstract "In order to create highly resistive InP with short carrier lifetimes, p-type epilayers at 200/spl deg/C were implanted with MeV P/sup +/ ions up to doses of 1 /spl times/ 10/sup 16/ cm/sup -2/. Samples were subsequently annealed at temperatures between 400/spl deg/C and 700/spl deg/C for 30s. Double crystal x-ray diffraction, time resolved photoluminescence and Hall effect measurements were performed on these samples. The results of these experiments were then compared with the ones obtained from implantation into semi-insulating InP with a view to create materials suitable for ultrafast photodetector fabrication." @default.
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• W2139567250 date "2005-08-25" @default.
• W2139567250 modified "2023-09-27" @default.
• W2139567250 title "Ion-implanted InP for ultrafast photodetector applications" @default.
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• W2139567250 doi "https://doi.org/10.1109/commad.2000.1022914" @default.
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