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- W2139791025 abstract "Narrow-channel n-MOSFETs with recessed LOCOS (R-LOCOS) isolation structure exhibit less hot carrier-induced degradation than wide-channel n-MOSFETs, but the degradation mechanism of both devices is the same. This new finding Is explained by the fact that in deep submicron MOSFETs with ultra-thin gate oxide, the dominant factor deciding the degradation behavior in narrow- and wide-channel devices is the vertical electric field effect rather than the mechanical stress effect." @default.
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- W2139791025 date "2000-03-01" @default.
- W2139791025 modified "2023-09-27" @default.
- W2139791025 title "Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFETs with recessed LOCOS isolation structure" @default.
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- W2139791025 doi "https://doi.org/10.1109/55.823578" @default.
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