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• W2139853775 abstract "Factors that affect single-event transient pulse widths, such as drift, diffusion, and parasitic bipolar transistor parameters, are also strong functions of operating temperature. In this paper, SET pulse-width measurements are performed over a wide temperature range in both bulk and fully-depleted SOI (silicon on insulator) technologies. The average pulse-width increases with temperature for the bulk process, but not for the FDSOI process." @default.
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• W2139853775 date "2009-12-01" @default.
• W2139853775 modified "2023-09-23" @default.
• W2139853775 title "Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologies" @default.
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• W2139853775 doi "https://doi.org/10.1109/tns.2009.2034150" @default.
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