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- W2139871508 abstract "Electro-thermal model of power semiconductor devices are of key importance in order to optimize their thermal design and increase their reliability. The development of such an electro-thermal model for power MOSFET transistors (COOLMOS™) based on the coupling between two computation softwares (Matlab and Cast3M) is described in the paper. The elaborated 2D electro-thermal model is able to predict i) the temperature distribution on chip surface well as in volume, ii) the effect of the temperature on the distribution of the current flowing within the die and iii) the effects of the ageing of the metallization layer on the current density and the temperature. In the paper, the used electrical and thermal models are described as well as the implemented coupling scheme." @default.
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- W2139871508 date "2012-03-01" @default.
- W2139871508 modified "2023-09-27" @default.
- W2139871508 title "Distributed and coupled electrothermal model of power semiconductor devices" @default.
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- W2139871508 doi "https://doi.org/10.1109/revet.2012.6195253" @default.
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